(China (Mainland))
Product Summary
The SD2933 is a gold metallized N-Channel MOS field-effect RF power transistor. It is intended for use in 50 V dc large signal applications up 150MHz. It’s special low thermal resistance package, makes the SD2933 ideal for ISM applications where reliability and ruggedness are critical factors.
Parametrics
SD2933 absolute maximum ratings: (1)V(BR)DSS, Drain Source Voltage: 125 V; (2)VDGR, Drain-Gate Voltage (RGS = 1MΩ): 125 V; (3)VGS, Gate-Source Volatge: ±20 V; (4)ID, Drain Current: 40 A; (5)PDISS, Power Dissipation: 648 W; (6)Tj, Max. Operating Junction Temperature: 200℃; (7)TSTG, Storage Temperature: -65 to +150℃.
Features
SD2933 features: (1)gold metallization; (2)excellent thermal stability; (3)common source configuration; (4)POUT = 300 W min. with 20 dB gain @ 30 MHz; (5)thermally enhanced packaging for lower junction temperatures.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||
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 SD2933 |
STMicroelectronics |
Transistors RF MOSFET Power N-Ch 125 Volt 40A |
Data Sheet |
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SD2933-03 |
STMicroelectronics |
Transistors RF MOSFET Power RF Power Transistor LdmoST N-ch Plastic |
Data Sheet |
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SD2933W |
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IC TRANS RF HF/VHF/UHF |
Data Sheet |
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SD2933-03W |
STMicroelectronics |
Transistors RF MOSFET Power HF/VHF/UHF RF N-Ch 300W 15dB 175MHz |
Data Sheet |
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